Dharmendra Singh Yadav Editor

Dharmendra Singh Yadav received the Ph.D. degree in electronics and communication engineering from the PDPM-Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India. He is currently working as Assistant Professor (Grade-I) in National Institute of Technology (NIT), Kurukshetra, Haryana India. He has more than 60 international repute publications and 4 book chapters. His current research interest includes VLSI Design: Nano-electronics Devices, Thin films transistors, Semiconductor Device, Negative Capacitance, Nanosheet FETS and circuits. Device Modeling: MOS Devices Modeling and Numerical simulation analysis of Semiconductor devices Electrical Characterization of semiconductor devices in MHz and THz frequency ranges. Circuit Design: Ultra Low Power SRAM / DRAM / RRAM based Memory Circuit Design from Devices to Array Architecture using CMOS and Advanced CMOS Devices technologies. Machine Learning in Semiconductor device/circuit-based application in research.

Sukeshni Tirkey received the Ph.D. degree in electronics and communication engineering from the PDPM-Indian Institute of Information Technology, Design and Manufacturing , Jabalpur, India. She is currently working in Maulana Azad National Institute of Technology (MANIT), Bhopal, Madhya Pradesh India. She has more than 20 international publications in reputed journals/conferences. Her current research interest includes VLSI Design: Nano-electronics Devices, Thin films transistors, Semiconductor Device, Negative Capacitance, Nanosheet FETS and circuits.

Shiromani Balmukund Rahi received Ph.D. (Indian Institute of Technology Kanpur), PDF (Electronics Department, University Mostefa Benboulaid of Batna Algeria). He is working in MCAET Akabarpur Ambedkar Nagar Uttar Pradesh affiliated to Narendra Dev University of Agriculture and Technology UP India. He has 25 international publications and 12 book chapters. He has edited 4 books for CRC publication. He is associated for research with Indian Institute of Technology Kanpur India and Electronics Department University Mostefa Benboulaid of Algeria for the development of ultra-low power devices such as Tunnel FETs, NC TFET, Negative Capacitance and Nanosheet FETS.