Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
Ludwig Stockmeier author Fraunhofer IISB, Erlangen editor
Format:Paperback
Publisher:Fraunhofer IRB Verlag
Published:1st Aug '18
Currently unavailable, and unfortunately no date known when it will be back
This paperback, "Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method." from Ludwig Stockmeier, Fraunhofer IISB & Erlangen, was published 1st August 2018 by Fraunhofer IRB Verlag.
ISBN: 9783839613450
Dimensions: unknown
Weight: unknown
204 pages