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Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

Ludwig Stockmeier author Fraunhofer IISB, Erlangen editor

Format:Paperback

Publisher:Fraunhofer IRB Verlag

Published:1st Aug '18

Currently unavailable, and unfortunately no date known when it will be back

Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. cover

This paperback, "Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method." from Ludwig Stockmeier, Fraunhofer IISB & Erlangen, was published 1st August 2018 by Fraunhofer IRB Verlag.

ISBN: 9783839613450

Dimensions: unknown

Weight: unknown

204 pages