GaN-Based Tri-Gate High Electron Mobility Transistors.
Erdin Ture author Fraunhofer IAF, Freiburg editor
Format:Paperback
Publisher:Fraunhofer IRB Verlag
Published:18th May '18
Currently unavailable, and unfortunately no date known when it will be back
This paperback, "GaN-Based Tri-Gate High Electron Mobility Transistors." from Erdin Ture, Fraunhofer IAF & Freiburg, was published 18th May 2018 by Fraunhofer IRB Verlag.
ISBN: 9783839613412
Dimensions: unknown
Weight: unknown
169 pages