Advances in Solid State Circuit Technologies

Solid-state transistors and integrated circuits has spawned the information age in the last 50 years. Information is at people’s hands and communications take seconds. Such rapid development stems from tremendous developments in both hardware and software such as solid-state circuits. Approaches such as parallel processing, new circuit design, and particularly novel materials are necessary.

Advances in Solid State Circuit Technologies provides concepts and current improvements of circuit technology. The applications of solid state in circuit’s elements go from simple led technology to complex transistors and chips. The advances take the new technologies to smaller sizes and faster operations. First chapter presents fault diagnosis of DC analog CMOS circuits and second chapter explores on high-accuracy function synthesizer circuit with applications in signal processing. Third chapter provides a new current-controlled-power technique for small signal applications. In fourth chapter, a design of a symmetry-type floating impedance scaling circuit and the improvement method of its operation bandwidth are proposed. Fifth chapter elaborates on the design and analysis of a power efficient linearly tunable cross-coupled transconductor having separate bias control, and sixth chapter presents a novel and unique polymorphic processor design. In seventh chapter, the differential ULV inverter is presented. The improvement in term of stability and delay relative to the ULV is elaborated. Furthermore, the reliability, yield and the defect tolerance of the differential ULV inverter compared with both standards CMOS and with ULV floating-gate inverter are examined. Chip design of a low-voltage wideband continuous-time sigma-delta modulator with DWA technology for WIMAX applications are highlighted in eighth chapter. Ninth chapter introduces the system architecture of the wideband continuous-time sigma-delta modulator and ninth chapter presents the design of a novel two-stage bulk-input pseudo differential Operational Transconductance Amplifier. Tenth chapter explores on the performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer and eleventh chapter highlights emerging nonvolatile memory technologies. Probe-based storage technologies are illustrated in twelfth chapter and thirteenth chapter presents a comparative analysis result of the proposed scheme and the conventional thyristor protection scheme incorporating a clamp NMOS device. Fourteenth chapter presents a CMOS 3.1 - 10.6 GHZ UWB LNA employing modified derivative superposition method. In fifteenth chapter, the challenges and opportunities of CBRAM devices using different switching materials such as chalcogenides,...