Nonvolatile Memory Design
Magnetic, Resistive, and Phase Change
Hai Li author Yiran Chen author
Format:Hardback
Publisher:Taylor & Francis Inc
Published:19th Dec '11
Currently unavailable, and unfortunately no date known when it will be back
This hardback is available in another edition too:
- Paperback£96.99(9781138076631)
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
ISBN: 9781439807453
Dimensions: unknown
Weight: 498g
208 pages