Nonvolatile Memory Design

Magnetic, Resistive, and Phase Change

Hai Li author Yiran Chen author

Format:Hardback

Publisher:Taylor & Francis Inc

Published:19th Dec '11

Currently unavailable, and unfortunately no date known when it will be back

This hardback is available in another edition too:

Nonvolatile Memory Design cover

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

ISBN: 9781439807453

Dimensions: unknown

Weight: 498g

208 pages