CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155
Bill Taylor editor Alexander A Demkov editor H Rusty Harris editor Jeffery W Butterbaugh editor Willy Rachmady editor
Format:Paperback
Publisher:Cambridge University Press
Published:5th Jun '14
Currently unavailable, and unfortunately no date known when it will be back
This paperback is available in another edition too:
- Hardback£94.00(9781605111285)
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.
ISBN: 9781107408326
Dimensions: 229mm x 152mm x 10mm
Weight: 270g
194 pages