CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155

Bill Taylor editor Alexander A Demkov editor H Rusty Harris editor Jeffery W Butterbaugh editor Willy Rachmady editor

Format:Paperback

Publisher:Cambridge University Press

Published:5th Jun '14

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CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155 cover

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

ISBN: 9781107408326

Dimensions: 229mm x 152mm x 10mm

Weight: 270g

194 pages