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Materials and Physics for Nonvolatile Memories: Volume 1160

Yoshihisa Fujisaki editor Rainer Waser editor Tingkai Li editor Caroline Bonafos editor

Format:Paperback

Publisher:Cambridge University Press

Published:5th Jun '14

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Materials and Physics for Nonvolatile Memories: Volume 1160 cover

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices.This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.

ISBN: 9781107408296

Dimensions: 229mm x 152mm x 12mm

Weight: 300g

216 pages