III-Nitride Semiconductors and their Modern Devices
Format:Hardback
Publisher:Oxford University Press
Published:22nd Aug '13
Currently unavailable, and unfortunately no date known when it will be back
This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.
This book, written by a team of worldwide experts in the field, deals with nitride based materials in 16 chapters. It covers growth and material aspects of nitrides, nano-devices, photonics, advanced transistors, slow light production, and terahertz emission. Emphasis is put on directions of aluminum rich nitrides for UV operation and utilization of silicon substrates. * Gerald Bastard, Ecole Normale Supérieure *
ISBN: 9780199681723
Dimensions: 234mm x 166mm x 39mm
Weight: 1288g
662 pages