High Speed Heterostructure Devices

Key Features * The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices

Aimed at the graduate student or working researcher, this work includes a review of InP-based HFETs and complementary HFETs. It offers a three-chapter review of resonant tunneling; and provides an emphasis on circuits as well as devices.Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature.